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DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BBY31 UHF variable capacitance diode Product specification Supersedes data of November 1993 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode FEATURES ã Excellent linearity ã Small plastic SMD package ã C28: 1.9 pF; ratio: 8.3. APPLICATIONS ã Electronic tuning in UHF television tuners ã VCO. DESCRIPTION The BBY31 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SO
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  DATA SHEET Product specificationSupersedes data of November 19931996May03 DISCRETE SEMICONDUCTORS  BBY31 UHF variable capacitance diode fpage  M3D088   1996May032 Philips Semiconductors Product specification UHF variable capacitance diode BBY31 FEATURES ã Excellent linearity ã Small plastic SMD package ã C28:1.9pF; ratio:8.3. APPLICATIONS ã Electronic tuning in UHF televisiontuners ã VCO. DESCRIPTION The BBY31 is a variable capacitancediode, fabricated in planartechnology, and encapsulated in theSOT23 small plastic SMD package.Fig.1 Simplified outline (SOT23), pin configuration and symbol. handbook, halfpage  2 13 MAM170  2n.c.13   Marking code: S1. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC134). ELECTRICAL CHARACTERISTICS T  j =25 ° C; unless otherwise specified. Note 1.V R is the value at which C d =9pF. SYMBOL PARAMETER MIN. MAX. UNIT V R continuous reverse voltage − 30VI F continuous forward current − 20mAT stg storage temperature − 55+150 ° CT  j operating junction temperature − 55+125 ° C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I R reverse currentV R =28V; seeFig.3 − − 10nAV R =28V; T  j =85 ° C; seeFig.3 − − 200nAr s diode series resistancef=470MHz; note1 − − 1.2 Ω C d diode capacitanceV R =1V; f=1MHz; seeFigs2and4 − 16.5 − pFV R =28V; f=1MHz; seeFigs2and41.6 − 2pFcapacitance ratiof=1 MHz − 8.3 − C d1V ( ) C d28V ( ) --------------------  1996May033Philips SemiconductorsProduct specification UHF variable capacitance diodeBBY31 GRAPHICAL DATA Fig.2 Diode capacitance as a function of reverse voltage; typical values. f=1MHz; T  j =25 ° C. handbook, full pagewidth  0   20 MBE874  10 2 10110 − 1 481216Cd(pF) VR(V) Fig.3Reverse current as a function of junctiontemperature; maximum values. handbook, halfpage  100010 MLC816  10 2 10 3 50IR(nA)T ( C) j o   Fig.4Temperature coefficient of diodecapacitance as a function of reversevoltage; typical values. handbook, halfpage  MLC815  1 10 10 2 10 3 10 4 10 5 10 1 (K − 1 )V (V)RdTC  1996May034Philips SemiconductorsProduct specification UHF variable capacitance diodeBBY31 PACKAGE OUTLINEDEFINITIONSLIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale. Data sheet status Objective specificationThis data sheet contains target or goal specifications for product development.Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.Product specificationThis data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. Fig.5 SOT23. handbook, full pagewidth  MBC846  10maxo10maxo30maxo1.1max0.550.450.1500.0900.1max 2 13 M0.1 A B0.480.38TOP VIEW1.41.22.5max3.0   2.8M0.2AAB0.951.9
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