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Order this document SEMICONDUCTOR TECHNICAL DATA by BC546/D NPN Silicon
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   1Motorola Small–Signal Transistors, FETs and Diodes Device Data      NPN Silicon MAXIMUM RATINGS RatingSymbolBC546BC547BC548Unit Collector–Emitter VoltageVCEO654530VdcCollector–Base VoltageVCBO805030VdcEmitter–Base VoltageVEBO6.0VdcCollector Current — ContinuousIC100mAdcTotal Device Dissipation @ TA = 25 ° CDerate above 25 ° CPD6255.0mWmW/  ° CTotal Device Dissipation @ TC = 25 ° CDerate above 25 ° CPD1.512WattmW/  ° COperating and Storage JunctionTemperature RangeTJ, Tstg –55 to +150  ° C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to AmbientR     JA200  ° C/WThermal Resistance, Junction to CaseR     JC83.3  ° C/W ELECTRICAL CHARACTERISTICS (TA = 25 ° C unless otherwise noted) CharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown VoltageBC546(IC = 1.0 mA, IB = 0)BC547BC548V(BR)CEO654530 — — — — — —VCollector–Base Breakdown VoltageBC546(IC = 100 µ Adc)BC547BC548V(BR)CBO805030 — — — — — —VEmitter–Base Breakdown VoltageBC546(IE = 10     A, IC = 0)BC547BC548V(BR)EBO6.06.06.0 — — — — — —VCollector Cutoff Current(VCE = 70 V, VBE = 0)BC546(VCE = 50 V, VBE = 0)BC547(VCE = 35 V, VBE = 0)BC548(VCE = 30 V, TA = 125 ° C)BC546/547/548ICES — — — —0.20.20.2 —1515154.0nA µ A Order this documentby BC546/D      SEMICONDUCTOR TECHNICAL DATA              CASE 29–04, STYLE 17TO–92 (TO–226AA) 123   ©  Motorola, Inc. 1996 COLLECTOR12BASE3EMITTER REV 1         2Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25 ° C unless otherwise noted) (Continued) CharacteristicSymbolMinTypMaxUnit ON CHARACTERISTICS DC Current Gain(IC = 10 µ A, VCE = 5.0 V)BC547A/548ABC546B/547B/548BBC548C(IC = 2.0 mA, VCE = 5.0 V)BC546BC547BC548BC547A/548ABC546B/547B/548BBC547C/BC548C(IC = 100 mA, VCE = 5.0 V)BC547A/548ABC546B/547B/548BBC548ChFE — — —110110110110200420 — — —90150270 — — —180290520120180300 — — —450800800220450800 — — — —Collector–Emitter Saturation Voltage(IC = 10 mA, IB = 0.5 mA)(IC = 100 mA, IB = 5.0 mA)(IC = 10 mA, IB = See Note 1)VCE(sat) — — —0.090.20.30.250.60.6VBase–Emitter Saturation Voltage(IC = 10 mA, IB = 0.5 mA)VBE(sat) —0.7—VBase–Emitter On Voltage(IC = 2.0 mA, VCE = 5.0 V)(IC = 10 mA, VCE = 5.0 V)VBE(on)0.55 — — —0.70.77V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)BC546BC547BC548fT150150150300300300 — — —MHzOutput Capacitance(VCB = 10 V, IC = 0, f = 1.0 MHz)Cobo —1.74.5pFInput Capacitance(VEB = 0.5 V, IC = 0, f = 1.0 MHz)Cibo —10—pFSmall–Signal Current Gain(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)BC546BC547/548BC547A/548ABC546B/547B/548BBC547C/548Chfe125125125240450 — —220330600500900260500900 —Noise Figure(IC = 0.2 mA, VCE = 5.0 V, RS = 2 k        ,BC546f = 1.0 kHz, ∆ f = 200 Hz)BC547BC548NF — — —2.02.02.0101010dBNote 1: IB is value for which IC = 11 mA at VCE = 1.0 V.         3Motorola Small–Signal Transistors, FETs and Diodes Device Data Figure 1. Normalized DC Current Gain IC, COLLECTOR CURRENT (mAdc)2.0 Figure 2. “Saturation” and “On” Voltages IC, COLLECTOR CURRENT (mAdc)0.20.51.01020500.2100 Figure 3. Collector Saturation Region IB, BASE CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA)2.05.02000.60.70.80.91.00.500.20.40.10.31.61.22.02.82.41.21.62.00.021.0100200.10.40.8    h   F   E ,   N   O   R   M   A   L   I   Z   E   D   D   C   C   U   R   R   E   N   T   G   A   I   N   V ,   V   O   L   T   A   G   E   (   V   O   L   T   S   )   V   C   E ,   C   O   L   L   E   C   T   O   R  –   E   M   I   T   T   E   R   V   O   L   T   A   G   E   (   V   )   V   B ,   T   E   M   P   E   R   A   T   U   R   E   C   O   E   F   F   I   C   I   E   N   T   (   m   V   /   C   )             °         θ 1.51.00.80.60.40.30.20.51.01020502.010070307.05.03.00.70.30.1 0.21.010100TA = 25 ° CVBE(sat) @ IC /IB = 10VCE(sat) @ IC /IB = 10VBE(on) @ VCE = 10 VVCE = 10 VTA = 25 ° C –55 ° C to +125 ° CTA = 25 ° CIC = 50 mAIC = 100 mAIC = 200 mAIC =20 mAIC =10 mA1.0 BC547/BC548 Figure 5. Capacitances VR, REVERSE VOLTAGE (VOLTS)10 Figure 6. Current–Gain – Bandwidth Product IC, COLLECTOR CURRENT (mAdc)0.40.61.010201.02.06.04080100200300400602040307.05.03.02.00.71.010202.050307.05.03.00.5 VCE = 10 VTA = 25 ° C    C ,   C   A   P   A   C   I   T   A   N   C   E   (   p   F   )   f ,   C   U   R   R   E   N   T  –   G   A   I   N  –   B   A   N   D   W   I   D   T   H   P   R   O   D   U   C   T   (   M   H   z   )   T 0.84.08.0TA = 25 ° CCobCib         4Motorola Small–Signal Transistors, FETs and Diodes Device Data BC547/BC548 Figure 7. DC Current Gain IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage IC, COLLECTOR CURRENT (mA)0.81.00.60.20.41.02.00.11.0101000.20.20.50.21.010200TA = 25 ° CVBE(sat) @ IC /IB = 10VCE(sat) @ IC /IB = 10VBE @ VCE = 5.0 V Figure 9. Collector Saturation Region IB, BASE CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) –1.01.21.62.00.021.0100200.10.40.8    V   C   E ,   C   O   L   L   E   C   T   O   R  –   E   M   I   T   T   E   R   V   O   L   T   A   G   E   (   V   O   L   T   S   )   V   B ,   T   E   M   P   E   R   A   T   U   R   E   C   O   E   F   F   I   C   I   E   N   T   (   m   V   /   C   )             °         θ 0.22.0102001.0TA = 25 ° C200 mA50 mAIC =10 mA    h   F   E ,   D   C   C   U   R   R   E   N   T   G   A   I   N   (   N   O   R   M   A   L   I   Z   E   D   )   V ,   V   O   L   T   A   G   E   (   V   O   L   T   S   ) VCE = 5 VTA = 25 ° C00.52.05.020501000.050.20.52.05.0100 mA20 mA –1.4 –1.8 –2.2 –2.6 –3.00.55.02050100 –55 ° C to 125 ° C θ VB for VBE BC546 Figure 11. Capacitance VR, REVERSE VOLTAGE (VOLTS)40 Figure 12. Current–Gain – Bandwidth Product IC, COLLECTOR CURRENT (mA)0.10.21.0502.02.010100100200500502020106.04.01.010501005.0VCE = 5 VTA = 25 ° C    C ,   C   A   P   A   C   I   T   A   N   C   E   (   p   F   )   f ,   C   U   R   R   E   N   T  –   G   A   I   N  –   B   A   N   D   W   I   D   T   H   P   R   O   D   U   C   T   T 0.55.020TA = 25 ° CCobCib
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