BEAMER. Electron-Beam and Laser Lithography. Advancing the Standard

Electron-Beam and Laser Lithography Optimum productivity, quality and innovation by superior data preparation for e-beam and laser lithography systems Advancing the Standard BEAMER Electron-Beam and Laser
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Electron-Beam and Laser Lithography Optimum productivity, quality and innovation by superior data preparation for e-beam and laser lithography systems Advancing the Standard BEAMER Electron-Beam and Laser Lithography Software High-resolution and high-throughput e-beam lithography is severely impacted by process effects, electron scattering effects, and tool artifacts resulting in nonideal pattern transfer. Although the e- beam tool is a highly sophisticated and expensive printer, the pattern data needs to be optimized to significantly reduce the effects of various error sources such as beam positioning between shapes, filling shapes with shots on a discrete grid, field position dependent aberrations, stitching between fields, the spread of energy by electron scattering (proximity) and process effects. BEAMER is a comprehensive software platform for preparing the data ideally for exposure: Support for all major layouts Support for all major electron-beam and laser exposure systems Superior machine specific fracturing of complex curved layouts Optimizing field and shot placement, writing strategy and order Library of comprehensive layout processing functions Integrated layout editor Ultra-fast and comprehensive viewer for fast inspection and verification Powerful proximity and process effect correction technology Electron-beam simulation of absorbed energy and resist contours Devin K. Brown, Georgia Institute of Technology - USA Weizmann Institute - Israel AMO GmbH - Germany Productivity, Quality & Innovation The BEAMER core provides reliable and highly powerful processing of large and complex layout data. It provides the user with a large number of functions for extracting, combining and modifying the layout for an optimum exposure. The interfaces all major e-beam and laser exposure tools are developed in strong co-operation with the machine vendor and are continuously optimized for the best exposure results, extending the limits of the system by smart data preparation. Examples include: optimizing the fracturing to significantly reduce shot position artifacts, avoiding field position and stitching issues by automated floating field, user controlled field positioning, and clever multi-pass strategies. The user can instantly visualize and quickly optimize the exposure process, including field and shot position. Applying techniques such as bulk & sleeve or coarse & fine combined with proximity effect correction (PEC) to easily and effectively achieve high resolution, smooth edges at increased throughput. Better Uniformity Quality Higher Contrast CD Linearity Optimize your Lithography Simple & Fast Productivity Efficient Data Preparation PEC is essential for improving the exposure quality by automatically adjusting exposure doses for optimum CD (critical dimension) uniformity and contrast. Additionally PEC eliminates the need to experimentally adjust the exposure dose for each layout thereby increasing productivity and process reproducibility. Performing traditional Trial & Error optimizations is very expensive and time consuming. Advanced techniques such as modelbased undersize-overdose enables ultrahigh resolution in difficult scenarios, 3D PEC for three dimensional resist profiles in single and multi-layer resists, and process calibration with simulation for quick development of new innovative solutions. Our strong collaboration with leading nanofabrication centers worldwide drives fast development cycles and assures that the user gets the best from their lithography systems and processes. BEAMER is designed for the industrial user focused on productivity, as well as universities and R&D centers interested in flexibility and high resolution lithography. Shorter Exposure Time Less Trial & Error 3D Lithography Innovation Ultra-High Resolution Field Control Weizmann Institute - Israel Paul Scherer Institute - Switzerland AMO GmbH - Germany Larger Process Window Minimum LER / LWR Drag & Drop GUI Intuitive Visual Flow TM Data Inspection PEC Proximity Effect Correction Multipass Python Scripting Simulation Curved Fracturing Major Layout Formats Large Data Volume Powerful Layout Operations Heidelberg Instruments Mikrotechnik GmbH - Germany Paul Scherer Institute - Switzerland BEAMER The VisualFLOW user interface allows to visually design process flows by simply dragging, dropping and connecting functional modules, providing increased productivity and efficiency. Shot View + Writing Order Zoomed with Writing Order A comprehensive library of modules is readily available and extensible by custom flows that can be stored in user definable databases for management and reuse. The Python scripting interface allows further automation and workflow integration with other software without a GUI. The integrated Layout VIEWER allows layout inspection at all stages, comparing layouts in multi-view mode, measurement functions, metrology support, viewing field and shot placement. The Layout Viewer is also available as stand-alone. BEAMER includes Import and Export for all major layout and machine formats, where the data volume is not limited. An integrated Layout Editor allows the creation of new layouts or the modification of existing layouts to add text or other features at any stage. The machine formats are continuously enhanced in strong co-operation with the machine vendors for getting the best exposure result by providing optimal data for the system, meaning optimal fracturing of complex curved layouts, controlling field and shot placement, defining the writing order, compensating for tool artifacts by intelligent multi-pass, and using powerful compaction to create small data volumes. BEAMER provides innovative tools for PEC and advanced process correction for nanoscale e-beam lithography. A robust 2D PEC is complemented by a model based shape and rule based corner correction and correction for 3D single and multi-layer resist profiles. The flexible Point Spread Function (PSF) and adapted algorithms allow the correction of resist and other process effects as well. BEAMER integrates e-beam simulation, allowing for verification and optimization via modeling of the corrected layout. The modeling includes beam positioning for the major e-beam writers. The combination of Metrology for comparing simulation data with experimental data and the Optimizer for the calibration of the model (PSF) parameter enables process effect correction. BEAMER Major Features Layout Import / Export Layouts of unlimited size in all major formats (GDSII, CIF, DXF, LTXT, OASIS, bitmap) e-beam and laser machine formats (JEOL, Raith, Elionix, Crestec, ADVANTEST, MEBES, Vistec, Heidelberg) Advanced Fracturing Support of all major machine formats Optimized for arbitrary shapes Curved fracturing Correction for shot positioning Beam Step Size (BSS) Fracturing Field position control (tiled, floating, manual) Multi-pass exposure Writing order control Integrated Layout Editor Create new layouts Edit layout within flow Add text, circle, ellipse, arc, VIEWER Integrated detachable global viewer Multi-view, measurements Metrology support Shot and field position view Layout and Boolean Operation Healing, Biasing, Sizing, Merge, Tone reversal (NOT) AND, OR, XOR, P-XOR, MINUS Extract layer, datatype, cell, region Scale, Shift, Rotation, Mirror Filter geometries by width, height and area Grid adjustment Mapping layout layers and datatypes Pre-fracture PEC and Process Correction Full PEC including short-range corrections Shape PEC for short- and mid-range Corner PEC 3D correction for single and multi layer resist FDA (Feature Dose Assignment) e-beam Modeling Flow Control Modules Split Loops with variables Script for starting command line application from flow Optimizer for parameter fitting Proximity and Process Correction 2D Dose PEC Fast and robust edge equalization technique Excellent dimension control by optimized dose on feature edges Fracturing based on absorbed energy distribution Perfectly symmetrical and stable for arbitrary shapes Shape Correction Model based shape correction of short and mid-range effects Combination with long-range correction with dose modulation Model based contrast enhancement ( undersize overdose ) 3D PEC Correction for defined resist thickness at any layout position (resist profile) for single layer resist (e.g. 3D gratings, 3D holograms, angled sidewalls) Correction for critical dimension (CD) for each layer for a multi-layer resist (T-Gate, bridge ) 200 nm Line-Space Pattern (100 nm HSQ on SOI) Laser Lithography Correction 3D Gray Tone Lithography OPC for resolution and linearity enhancement Corner PEC Corner sharpening correction at feature edges and corners. Dose PEC combined with rule based correction for edges, inner and outer corners. Flexible PSF and Process Modeling PSF from Monte Carlo simulation or experimental table Visualization and fit of PSF function Apply full PSF data or Gaussian approximation Process loading, shot size dependent blur, fogging effect e-beam Modeling 2D intensity image, 2D resist contour at multiple thresholds 1D / 2D image viewing and analysis Multi- and matrix-view for automated runs Metrology for automated measurement and comparison to experiment Optimizer for Process Calibration Automated fitting of process parameter (e.g. PSF) to experimental data Convenient interface to metrology data TRACER VIEWER Electron Scattering and Process Blur quantified Fast, reliable and accurate PSFs for electron-beam lithography correction and simulation VIEWER is an ideal, ultrafast tool to inspect and compare layouts that is included with BEAMER and available separately. On the input side, all major layout (GDSII, OASIS, CIF, DXF) plus e-beam and laser machine formats are supported. Multiple layout files can be loaded in parallel to draw them overlaid. The user has a multitude of viewing options and capabilities. Extensive color management (user defined palette, transparency and overlay colors, and mapping of colors to layers/datatypes, doses, cells, layouts) Hierarchy support (view of the hierarchy tree, selection of cells/layers to be displayed, drawing of features down to a user specified hierarchy depth) Metrology support (measure, pick, various snapping options such as snap to edge, snap to corner, snap orthogonal) Script generation for automation of metrology equipment and visualization of metrology results added into the layout For electron-beam machine formats view deflection fields, beam shots, writing order, and stage traversal order A Point Spread Function (PSF) is the essential input for any type of Proximity /Process Effect Correction or e-beam simulation and defines the deposited energy as a function of the distance from the incident beam. One can think of it as the convolution of electron scattering, beam size (or beam blur), and process effects. The quality of a process effect correction entirely depends on the knowledge of that PSF. As such, a good starting point is the Monte Carlo (MC) simulation that includes the fast secondaries generated by the primary exposure as well as the backscattering process. TRACER offers an easy to use interface for defining the parameters (material data, stack parameters, acceleration voltage), running the MC simulation, visualization of r-z simulation results (energy spread at different resist thicknesses), and the extraction of the 1D PSF which can be used for PEC. In addition, the tool contributions such as spot size and process blurs such as diffusion need to be quantified and factored in. BEAMER comes with the essential tools to experimentally quantify tool and process contributions. TRACER includes all the essentials needed to combine Monte-Carlo PSFs and process PSFs into one effective PSF that describe a particular process, to archive and maintain these functions. TRACER is a Monte Carlo simulator that computes the electron-solid interaction for optimal e-beam exposures, including system beam blur Archive to maintain and manage all PSFs Visualization tool to quickly inspect PSFs Facilitator to combine electron PSFs and process PSFs into a single effective PSF or to separate out the process contribution PSF from an experimental PSF, including averaging of PSF s Dose factor calculator between two PSF s (example between two substrate types) Electron trajectory viewer (results can be exported for external processing) BEAMER integration of the TRACER archive shown above. All products share a highly dedicated support, have flexible licensing and are available on various platforms/operating systems. Flexible licensing and platform support USB-License Key for local and network Flexible for off-the-shelf PCs ( 4GB RAM recommended) Windows 64 bit Linux 64: Red Hat v5.0. Inquire for other Linux distributors Parallel processing: Multithreading, optional cluster support Maintenance and support Technical Support Hotline ( , Skype, phone) Frequent updates with enhancements, new functions, performance tuning and bug fixes Regional trainings, technical workshops, user meetings 12 month maintenance service included in license price Based in Munich, Germany, with offices in Tokyo, Japan and California, USA, GenISys develops, markets and supports flexible, high-performance software solutions for the optimization of micro and nano fabrication processes. Addressing the market for lithography and inspection, GenISys combines deep technical expertise in layout data processing, process modeling, correction and optimization with high caliber software engineering and a focus on ease of use. All in One Lithography Simulation Electron-Beam Lithography Software Electron Scattering and Process Blur Quantified GenISys products give researchers, manufacturers and system suppliers unparalleled efficiency, ease of use and optimal value in research, development and production of future nano-patterning technologies. As a company focused on customer service, GenISys delivers fast, highly dedicated support for application and development of needed functionality to meet demanding customer needs. GenISys GmbH Eschenstraße Taufkirchen - Germany Phone +49 (0) Fax +49 (0) GenISys USA Phone +1 (408) GenISys Japan / Asia-Pac. Phone +81 (3) GenISys/BEAMER/09.15/E/0.5/V3.0/ROBI
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