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BPW 21

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BPW 21
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  BPW 21 Semiconductor Group11998-11-13 Silizium-Fotodiode für den sichtbaren SpektralbereichSilicon Photodiode for the visible spectral range Wesentliche Merkmale  Speziell geeignet für Anwendungen imBereich von 350 nm bis 820 nm  Angepaßt an die Augenempfindlichkeit (V λ )  Hermetisch dichte Metallbauform (ähnlichTO-5) Anwendungen  Belichtungsmesser für Tageslicht  Für Kunstlicht mit hoher Farbtemperatur inder Fotografie und Farbanalyse Features  Especially suitable for applications from350 nm to 820 nm  Adapted to human eye sensitivity (V λ )  Hermetically sealed metal package (similarto TO-5) Applications  Exposure meter for daylight  For artificial light of high color temperature inphotographic fields and color analysis   TypTypeBestellnummerOrdering Code BPW 21Q62702-P885 BPW 21 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.      f    m    o     0     6     0     1     1  BPW 21 Semiconductor Group21998-11-13 GrenzwerteMaximum RatingsBezeichnungDescriptionSymbolSymbolWertValueEinheitUnit Betriebs- und LagertemperaturOperating and storage temperature range T  op ;  T  stg  – 40...+ 80  ° CLöttemperatur (Lötstelle 2 mm vomGehäuse entfernt bei Lötzeit  t   ≤  3 s)Soldering temperature in 2 mm distancefrom case bottom ( t   ≤  3 s) T  S 235  ° CSperrspannungReverse voltage V  R 10VVerlustleistung,  T  A  = 25  ° CTotal power dissipation P tot 250mW Kennwerte ( T  A  = 25  ° C, Normlicht A,  T  = 2856 K) Characteristics ( T  A  = 25  ° C, standard light A,  T  = 2856 K) BezeichnungDescriptionSymbolSymbolWertValueEinheitUnit Fotoempfindlichkeit,  V  R  = 5 VSpectral sensitivity S  10 ( ≥  5.5)nA/lxWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivity λ S max 550nmSpektraler Bereich der Fotoempfindlichkeit S   = 10 % von  S  max Spectral range of sensitivity S   = 10 % of  S  max λ 350...820nmBestrahlungsempfindliche FlächeRadiant sensitive area  A 7.34mm 2 Abmessung der bestrahlungsempfindlichenFlächeDimensions of radiant sensitive area  L  ×  B L  ×  W  2.73  × 2.73mm  × mmAbstand Chipoberfläche zu Gehäuseober-flächeDistance chip front to case surface  H  1.9...2.3mmHalbwinkelHalf angle ϕ ± 55Graddeg.  BPW 21 Semiconductor Group31998-11-13DunkelstromDark current V  R  = 5 V V  R  = 10 mV  I  R  I  R 2 ( ≤  30)8 ( ≤  200)nApASpektrale Fotoempfindlichkeit,  λ  = 550 nmSpectral sensitivity S  λ 0.34A/WQuantenausbeute,  λ  = 550 nmQuantum yield η 0.80ElectronsPhotonLeerlaufspannung,  E  v  = 1000 IxOpen-circuit voltage V  O 400 ( ≥  320)mVKurzschlußstrom,  E  v  = 1000 IxShort-circuit current  I  SC 10  µ AAnstiegs- und Abfallzeit des FotostromesRise and fall time of the photocurrent  R L  = 1 k Ω; V  R = 5 V;  λ  = 550 nm;  I  p  = 10  µ A t  r ,  t  f 1.5  µ sDurchlaßspannung,  I  F = 100 mA,  E   = 0Forward voltage V  F 1.2VKapazität,  V  R = 0 V,  f  = 1 MHz,  E   = 0Capacitance C  0 580pFTemperaturkoeffizient von  V  O Temperature coefficient of  V  O TC  V  – 2.6mV/KTemperaturkoeffizient von  I  SC Temperature coefficient of  I  SC TC  I  – 0.05%/KRauschäquivalente StrahlungsleistungNoise equivalent power V  R = 5 V,  λ  = 550 nm  NEP 7.2  × 10  – 14  W √ HzNachweisgrenze,  V  R = 5 V,  λ  = 550 nmDetection limitD*1  × 10 12 cm ·  √ Hz W Kennwerte ( T  A  = 25  ° C, Normlicht A,  T  = 2856 K) Characteristics ( T  A  = 25  ° C, standard light A,  T  = 2856 K) (cont’d) BezeichnungDescriptionSymbolSymbolWertValueEinheitUnit  BPW 21 Semiconductor Group41998-11-13 Relative spectral sensitivity S  rel =  f   ( λ ) Dark current  I  R =  f   ( V  R ) Photocurrent  I  P =  f   (  E  v ),  V  R  = 5 V Open-circuit voltage  V  O =  f   (  E  v ) Capacitance C  =  f   ( V  R ),  f   = 1 MHz,  E   = 0 Total power dissipation P tot =  f   ( T  A  ) Dark current  I  R =  f   ( T  A ),  V  R = 5 V Directional characteristics  S  rel =  f   ( ϕ )  This datasheet has been download from:www.datasheetcatalog.com Datasheets for electronics components.
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