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lecture 5 of vlsi
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  Lecture #5 OUTLINE ã  Intrinsic Fermi level ã  Determination of E  F ã  Degenerately doped semiconductor ã  Carrier properties ã  Carrier drift Read: Sections 2.5, 3.1  Spring 2007   EE130 Lecture 5, Slide 2   Intrinsic Fermi Level, E  i ã To find E  F  for an intrinsic semiconductor, use the fact that n  =  p : 2ln432ln22 ** /)(/)( vcn pvciicvvc F kT  E  E vkT  E  E c  E  E mmkT  E  E  E  E  N  N kT  E  E  E e N e N   v F  F c             Spring 2007   EE130 Lecture 5, Slide 3   n( n  i , E  i ) and p  ( n  i , E  i ) ã In an intrinsic semiconductor, n =  p = n i  and E  F = E  i   : /)( /)( kT  E  E ickT  E  E ci icic en N e N nn    /)(  /)( kT  E  E ivkT  E  E vi vivi en N e N n p    /)(  kT  E  E i i F  enn     /)(  kT  E  E i  F i en p     Spring 2007   EE130 Lecture 5, Slide 4   Example: Energy-band diagram Question: Where is E  F  for n = 10 17  cm -3 ?
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