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Magneto Resistive Random Access Memory

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  Presented by Karthik M191038010 Magneto Resistive Random Access Memory  Introduction to MRAM    Class of Solid-State Storage Circuits.   Non-Volatile in nature.   Stores data in the form of stable magnetic states.   Reads the data by measuring the electrical resistance of the device.   Employs different field switching methods.    MRAM Basics and Cell Structure   Earlier, Magnetic(ferrite) core memory was the most widely used memory system.   Valued for its speed, reliability, radiation hardness.   Giant Magneto Resistance(GMR) was discovered in 1988.    MRAM Basics and Cell Structure   GMR is a quantum mechanical phenomenon.   Electrons align their spin with the magnetization of the ferro-magnet.    Anti-Parallel orientation results in LOW resistance.   Parallel orientation results in HIGH resistance.

19-03-24-SC.pdf

Sep 10, 2019
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