Study Guides, Notes, & Quizzes

High-isolation wideband single-pole double-throw (SPDT) transmitter/receiver (T/R) switch with PIN diode for wireless communication applications

Description
High-isolation wideband single-pole double-throw (SPDT) transmitter/receiver (T/R) switch with PIN diode for wireless communication applications
Published
of 2
All materials on our website are shared by users. If you have any questions about copyright issues, please report us to resolve them. We are always happy to assist you.
Related Documents
Share
Transcript
  1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00Freq [GHz]-50.00-45.00-40.00-35.00-30.00-25.00-20.00-15.00-10.00-5.000.00    S -   P  a  r  a  m  e   t  e  r  s   [   d   B   ] T S21S11 High-Isolation Wideband Single-Pole Double-Throw (SPDT) Transmitter/Receiver (T/R) Switch with PIN Diode for Wireless Communication Applications Yasser M. Madany Senior, Member IEEE, Comm. and Electro. Depart., Alexandria University, Egypt ymadany@ieee.org   Nouer Eldin H. Ismail Communications and Electronics Depart., Alexandria University, Egypt Hayman A. Hassan Communications and Electronics Depart., Alexandria University, Egypt hayman.hassen@yahoo.com  Abstract   —The FCC’s allocation of 300 MHz of bandwidth in the 5-GHz frequency band (5.15–5.35/5.725–5.825 GHz) for the unlicensed national information infrastructure (UNII), high data rate (up to 50 Mb/s) wireless local area networks (WLAN) have become increasingly popular and important for mobile computing devices such as notebook computers. The European counterpart is the HIPERLAN (High Performance Radio LAN) system, which also operates in the 5-GHz band (5.15–5.35/5.47– 5.725 GHz). In order to meet the potentially high demand for such wireless LAN products, low-cost radio transceiver front-ends capable of performing at 5.15–5.825 GHz are essential. In this paper, a compact wideband SPDT-T/R switch with PIN diode and triangular microstrip antenna have been introduced, analyzed and designed. The proposed SPDT will produce high isolation when the PIN diodes are turned ‘OFF’. The simulated and experimental results of the proposed structures are presented to demonstrate the performance. I.   I  NTRODUCTION  In the last decade several new wireless communication standards such as Bluetooth and IEEE802.11b/g have been developed in the free ISM (Industrial, Scientific and Medical)  band of 2.40-2.48 GHz. The next free ISM band above 2.4 GHz is the 5.15-5.35 GHz band which has been utilized by, for instance, the IEEE802.11a standard. Like products at 2.4 GHz,  products developed at 5 GHz should also have the possibility for volume production at low cost. In modern communication systems, SPDT T/R switch is a block in a transmitter/receiver (T/R) module that routes antenna (ANT) to either transmitter (TX) or receiver (RX). Hence, a typical SPDT T/R switch can operate either in transmit or receive mode at which low-loss  paths are formed between ANT and TX or RX while isolating the other port, respectively [1]-[3]. In this paper, a wideband SPDT-T/R switch with PIN diode and triangular microstrip antenna have been introduced. The proposed structure has been designed using duroid substrate with (   r   = 6.15, tan     = 0.0019) and thickness of 0.635 mm. The characteristics of the proposed structure for TX and RX modes are obtained and analyzed using HFSS simulator [4] to demonstrate the performance. The compact integrated SPDT switch with triangular microstrip antenna at 5 GHz has been fabricated and measured. II.   T HE S IMULATED SPDT   D ESIGN S TRUCTURE The proposed identical SPDT-T/R switch with PIN diode structure is shown in Fig.1. In a typical transceiver system,  primary aims are to direct high power RF signal from TX to ANT while preventing leakage of that large signal into more sensitive front-end of RX, as shown in Fig.2. (a) TX-Side. (b) RX-Side.  Figure 1. The proposed SPDT switch structure with PIN diode. Figure 2. The proposed SPDT switch in transceiver system. From Fig.2, it was found that, in transmit mode (RF signals go through TX to ANT), the PIN diodes are turned 'OFF'. Then, TX coupled-resonator becomes all-pass response while in the receive arm, the PIN diodes are turned 'ON'. Then, the RX coupled-resonator becomes band-stop response. Hence, the additional isolation can be obtained and also the receive arm  becomes absorptive port. The same operation can be obtained in the receive mode (RF signals go through ANT to RX) when PIN diodes are turned 'ON' in the transmit arm; and PIN diodes are turned 'OFF' in the receive arm. Numerical simulation is used to obtain the S-parameter characteristics of the TX and RX sides of identical wideband SPDT-T/R switch structures, as shown in Fig.3. (a) TX-Side.   PIN Diode  /4  /2  /4  /4    5            /   8  RX   ANT TX Transmitted RF Signal ON OFF OFF OFF ON ON Leakage RF Signal 1006978-1-4673-5317-5/13/$31.00 ©2013 IEEEAP-S 2013    (b) RX-Side.  Figure 3. The proposed SPDT-T/R sides simulation results. Fig. 3 shows simulated S  -parameter data of the two sides of SPDT switch networks. The basic behavior of the SPDT switch shows wideband RF properties in terms of low transmission losses ( S  21     -1 dB, ON state) and high isolation ( S  21 , OFF state) over a relatively wide frequency range. III.   A  NTENNA D ESIGN S TRUCTURE The triangular microstrip patch antenna with slotted structures arrangement on the ground plane side and tuning microwave network on the antenna feeding has been introduced and analyzed. The top and bottom sides view of the  proposed antenna, its mechanical parameters in millimeter and S  11  in dB versus  f    in GHz are shown in Fig.4. The antenna operating frequency, around 5 GHz, has been chosen based on the proposed SPDT-T/R sides simulation results to investigate the behavior of the fully integrated SPDT-T/R module design which it has been introduced. Figure 4. The proposed antenna design and simulation result. IV.   T HE S IMULATION AND E XPERIMENTAL OF F ULLY I  NTEGRATED SPDT-T/R    M ODULE D ESIGN S TRUCTURE  The fully integrated SPDT-T/R module design with layout size (4.9cm   3cm) and simulated results for TX and RX modes are shown in Fig.5. (a) Fully module design.   (b) TX Mode.   (c) RX Mode.  Figure 5. The proposed integrated module and simulated results A photograph of the proposed module design has been fabricated using printed circuit technology at microwave laboratory and the measured S-parameters in dB have been analyzed, as shown in Fig.6. (a) The proposed module design.   (b) Measured results.  Figure 6. The proposed module design and measured results. From the comparison between simulated and measured results, it was found that the proposed fully integrated SPDT-T/R switch with PIN diode has high-isolation up to -52 dB. V.   C ONCLUSIONS The proposed compact wideband fully integrated SPDT-T/R module design with PIN diode has been introduced to meet the requirements for wireless. The proposed SPDT-T/R switch is designed to improve the isolation as well as to create an absorptive port. The proposed design has been fabricated and analyzed. The measured and simulated characteristics have  been introduced to illustrate the SPDT-T/R switch performance satisfying high-isolation in the TX and RX modes. R  EFERENCES   [1]   Y.Ushijima, E.Nishiyama, and M.Aikawa,“Single layer extensible microstrip array antenna integrating SPDT switch circuit for linear  polarization switching,” IEEE Transactions on Antennas and Propagation, vol. 60, no. 11, November 2012. [2]   S.Y.M.J.Hamzah, B.H.Ahmad, and P.W.Wong,"Multiband matched  bandstop filter," Proceedings of 2010 IEEE Asia-Pacific Conference on Applied Electromagnetics (APACE 2010), pp.1-4, Nov. 2010. [3]   M.K.Zahari, B.H.Ahmad, N.A.Shairi, and P.W.Wong; ,"Reconfigurable matched bandstop filter," RF and Microwave Conference (RFM), 2011 IEEE International, pp.230-233, Dec. 2011. [4]   “High frequency structure simulator software package,” HFSS v12.l, Ansoft Corporation. 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00Freq [GHz]-50.00-45.00-40.00-35.00-30.00-25.00-20.00-15.00-10.00-5.000.00    S -   P  a  r  a  m  e   t  e  r  s   [   d   B   ]  S11S21 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 5.10 5.20Freq[GHz]-20.00-17.50-15.00-12.50-10.00-7.50-5.00-2.500.00     S    1    1     [    d    B    ]   20.1 2.48 3 2 1.5 1    2   4 .   2 0.5 6.76 1 1 16.27 0.2 5.28 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00Freq [GHz]-75.00-62.50-50.00-37.50-25.00-12.500.00    S -   P  a  r  a  m  e   t  e  r  s   [  m  a  g ,   d   B   ] T S21S11 High Isolation Up to -75 dB 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00Freq [GHz]-70.00-60.00-50.00-40.00-30.00-20.00-10.000.00    S -   P  a  r  a  m  e   t  e  r   [   d   B   ] T S21S11 High Isolation Up to -70 dB High Isolation Up to -52 dB 1007
Search
Similar documents
View more...
Tags
Related Search
We Need Your Support
Thank you for visiting our website and your interest in our free products and services. We are nonprofit website to share and download documents. To the running of this website, we need your help to support us.

Thanks to everyone for your continued support.

No, Thanks