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Dr Darwin Enicks Cv

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1. 6 8 4 5 S N O W B I R D D R . ã C O L O R A D O S P R I N G S , C O 8 0 9 1 8 P H O N E 7 1 9 - 2 7 8 - 9 1 9 6 ã M O B I L E 7 1 9 - 5 1 0 - 5 8 2 8 ã E - M A I…
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  • 1. 6 8 4 5 S N O W B I R D D R . • C O L O R A D O S P R I N G S , C O 8 0 9 1 8 P H O N E 7 1 9 - 2 7 8 - 9 1 9 6 • M O B I L E 7 1 9 - 5 1 0 - 5 8 2 8 • E - M A I L D A R W I N E N I C K S @ C O M C A S T . N E T D R . D A R W I N E N I C K S SUMMARY OF QUALIFICATIONS A highly motivated, skilled, and innovative Engineering Manager with extensive experience driving successful continuous improvement programs (CIP) for enhanced device performance and yield, cost reduction and productivity improvement. Knowledge and expertise spans equipment and process engineering, yield engineering, and device design. Core competencies include:  Semiconductor process and device physics, and compound semiconductors  Innovation; 21 patents and patents pending  Effective communication  Team building - leading, motivating, and training  R&D; from conception to volume manufacturing PROFESSIONAL EXPERIENCE 2007 - Current University of Colorado Colorado Springs, CO Lecturer – Semiconductor Physics and Devices (including optical/solar) 2006 - Current ATMEL Corporation Colorado Springs, CO Process Engineering Section Manager  In-depth knowledge of MOSFET, HBT, BJT, EPROM, and EEPROM devices and associated silicon and SOI substrates and processes; ion implant, LPCVD (amorphous/poly silicon and nitride), oxidation, epitaxy (silicon and silicon germanium), compound semiconductors, dopant diffusion and anneal  Direct management of 7 engineers and 12 technicians; indirect management of 40+ engineers, 100+ technicians  >$10M/year in yield enhancements  >$1M/year in cost savings  Extensive FMEA, DOE, Change Control Review Board (CCRB) expertise  Implemented statistical machine control (SMC); ~50% reduction in equipment faults  Expertise with equipment and process controls for optimum, high yield manufacturing  Expertise with Automotive quality standards and qualifications  Productivity enhancement; 40% reduction in process qualification  Developed and implemented vacuum and semiconductor physics training programs for ~60 engineers and 120 technicians  Developed a successful R&D link with Queen’s University of Northern Ireland to develop novel
  • 2. semiconductor substrate technologies; also resulted in a strategic alliance with ATMEL 2001 - 2006 ATMEL Corporation Colorado Springs, CO Senior Principal Engineer – SiGe LPCVD  Enhanced ATMEL’s profitability with innovative process, equipment, and device solutions; achieved ATMEL’s first high yield, production worthy silicon germanium (SiGe) process; steady production at ~200 wafers/week  90% reduction in PM recovery time; world best for Applied Materials SiGe epitaxy; results presented at the 2002 AMAT Epi Symposium in Santa Clara, CA  Co-developed ATMEL’s first 100 - 150 GHz SiGe heterojunction bipolar transistor (HBT); sub 30 nanometer SiGe deposition  Co-developed, with AMAT, a world-class temperature calibration program which became a worldwide product for AMAT; now a free product for ATMEL  ATMEL’s first SiGe process and device modeling program  Implemented a SiGe device physics training program for ~60 engineers and managers 2000 - 2001 ATMEL Corporation Colorado Springs, CO Principal Engineer – High Density Plasma (HDP) CVD  ATMEL’s first AMAT HDP production worthy processes; from equipment installation to product qualification  Led efforts to resolve numerous equipment issues (>3M in savings to ATMEL); ESC and cathode redesign  Improved Cpk’s from <1.2 to >2.0  Drove equipment availability to >85%  Improved productivity through robot optimization 1998 - 2000 ATMEL Corporation Colorado Springs, CO Senior Equipment Engineer – Plasma and Wet Etch  Drove equipment avail/uptime from <75%/80% to > 85%/90%  Enhanced productivity through improved MTBF and MTTR from characterization of subcomponent failures and predictive maintenance  Implemented equipment programs to improve and characterize RF matching, gas injection, and vacuum integrity  Joint development of a plasma impedance monitor with Scientific Systems of Ireland (for the Phase IV and Super E RF match)  Extensive vacuum characterization 1997 - 1998 ATMEL Corporation Colorado Springs, CO Central Services Supervisor and Equipment Engineer  Managed ~12 technicians covering vacuum pumps, reactor component cleaning and rebuild, and bulk chemical distribution
  • 3.  Conceived and led efforts for >$2M/year in cost savings (gas, DI water, and chemicals) PATENTS AND PUBLICATIONS 1st inventor – 4 patents awarded and 17 patents pending related to SiGe, silicon-on-insulator (SOI), and silicon-germanium-on-insulator (SGOI), and MOSFET, HEMT, and HHMT devices and processes 21 papers published with refereed journals and conferences of IEEE, ECS, AVS, and Solid State Technology Magazine 4 invited papers (2002, 2004, 2005, 2007) METROLOGY KNOWLEDGE & EXPERIENCE TEM, SEM, AFM, SIMS, EELS, AUGER, ICPMS, FPP, SRP, XRD, EDX EDUCATION 2007 University of Colorado Colorado Springs, CO PhD, Electrical Engineering  Dissertation “Investigation of Carbon Profiles for Enhanced Boron Confinement and Improved Carrier Transport in Strained Silicon Germanium Nanolayers for Heterojunction Bipolar Transistors”  Developed novel carbon doping techniques in boron doped c-SiGe to improve dopant diffusion, carrier transport, and HBT noise characteristics 2004 University of Colorado Colorado Springs, CO MS, Electrical Engineering  Thesis “Oxygen Effects in sub-50nm Silicon Germanium Processing with Emphasis on HBT Manufacturing and Performance” 1989 University of Oklahoma Norman, OK BS, Mechanical Engineering 1984 - 85 United States Military Academy WestPoint, NY Honorable discharge PROFESSIONAL MEMBERSHIPS IEEE, ECS, AVS AWARDS RECEIVED  2007 Outstanding Graduate Researcher – UCCS  2006 Mayor of Colorado Springs Annual Award for creating international ties with Northern Ireland  2004 Outstanding Graduate Student - UCCS
  • 4. PAPERS AND PUBLICATIONS INVITED CONFERENCE AND SEMINAR PAPERS 1. “Demonstration of Fast Recovery and Sub-E17 Oxygen Processing for Low Temp LPCVD SiGeC:B Strained Layers”, Darwin Enicks, Atmel Corp., 2002 AMAT Epitaxial technology strategic symposium 2. “Elevated Oxygen Concentration in In-situ Born Doped SiGe and SiGeC Sub-50 nm NPN HBTs”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , 2004 ICICDT (International Conference of IC Design and Technology), Austin, Tx 3. “Study of Process Induced Oxygen Updiffusion in Pseudomorphic Boron Doped Sub-50 NM SiGeC layers grown by LPCVD”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , 2005 ICICDT (International Conference of IC Design and Technology), Austin, Tx *Note: This is the first discovery worldwide of oxygen updiffusion mechanism in the strained boron and carbon doped silicon germanium (SiGeC:B) material system. 4. “SiGe Technology for RF Applications”, D. Enicks, ATMEL Corporation, 2007 Solid State /Electron Devices Chapter of the IEEE Pikes Peak Section PEER REVIEWED CONFERENCE PRESENTATIONS 5. “Advanced metrology tool for Si1-xGex characterization: Infrared Spectroscopic Ellipsometer (IRSE)”, Enicks, D.; I-L Teng; Rubino, J.; Sun, L.; Defranoux, C.; Bourtault, S.; Hendrich, P.; Stehle, J.-L.; 4-6 May 2004 Page(s):425 – 432, Advanced Semiconductor Manufacturing, 2004, ASMC '04; IEEE Conference and Workshop 6. “Device Performance Considerations of NPN HBTs Due to Elevated Oxygen in Sub-50 nm SiGe and SiGeC Base Layers Grown by LPCVD”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , Electrochemical Society Conference 2004, Honolulu, Hawaii 7. “Temperature Control Studies for LPCVD of Complex In-Situ Doped Sub-50 nm SiGe and SiGeC Base Films in NPN HBTs”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , Electrochemical Society Conference 2004, Honolulu, Hawaii 8. “Low Temperature LPCVD Epitaxy of In-Situ Boron Doped SiGe and SiGeC Strained Layers with sub-E17 Oxygen Concentration”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , Electrochemical Society Conference 2004, Honolulu, Hawaii 9. “Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped SiGeC”, Darwin Enicks and Gerald Oleszek, Meet. Abstr. - Electrochem. Soc. 602 1510 (2006)
  • 5. 10. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles with Enhanced Conductivity in Sub-50 NM Strained Layers of Silicon Germanium”, Darwin Enicks and Gerald Oleszek, Meet. Abstr. - Electrochem. Soc. 602 1410 (2006) 11. "SiGe Technology for RF applications", Solid State / Electron Devices Chapter of the IEEE Pikes Peak Section, D. Enicks, Nov. 2006 12. “A Novel Carbon Confinement Technique for Ultrathin Boron Profiles in Strained Layers of Silicon Germanium”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , 2005 International Conference of Nanotechnology (Oct. 31 – Nov 4; San Francisco) 13. “A Novel Carbon Confinement Technique for Formation of Nanometer SiGeC HBTs with Low Base Resistance”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , 2005 International Conference of Nanotechnology (Oct. 31 – Nov 4; San Francisco) 14. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles With Enhanced Conductivity in Sub-50 NM Strained Layers of Silicon Germanium”, Darwin Enicks and Gerald Oleszek, Meet. Abstr. - Electrochem. Soc. 601 356 (2006) 15. “Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped SiGeC”, Darwin Enicks and Gerald Oleszek, Meet. Abstr. - Electrochem. Soc. 601 357 (2006) JOURNAL PUBLICATIONS 16. “Remote Carbon Method SiGeC:B by LPCVD for Sub-40 nm NPN HBT Devices”, D. Enicks, Solid State Technology, August 2006 17. “Thermal Redistribution of Oxygen and Carbon in Boron-Doped Pseudomorphic SiGeC Heterojunction Nanometer Base Layers, Darwin Enicks and Gerald Oleszek, J. Electrochem. Soc. 153 G529 (2006) 18. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles in Strained Layers of Silicon Germanium”, Darwin Enicks and Gerald Oleszek, J. Electrochem. Soc. 153 G405 (2006) 19. “Process-Induced Oxygen Updiffusion in Pseudomorphic Boron-Doped Sub-50 nm SiGeC Layers Grown by LPCVD”, Darwin Enicks and Gerald Oleszek, Electrochem. Solid-State Lett. 8 G286 (2005) 20. “Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped SiGeC”, Darwin Enicks and Gerald Oleszek, ECS Trans. 3, 1087 (2006) 21. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles with Enhanced Conductivity in Sub-50 NM Strained Layers of Silicon Germanium”, Darwin Enicks and Gerald Oleszek, ECS Trans. 3 (7), 161 (2006) 22. “Vacuum Science Considerations for Rapid Reactor Recovery With Extremely Low Oxygen In Low Temperature LPCVD of Si1-xGex And Si1-x-yGexCy Films”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2 , Journal Vac. Sci. Technol. A 24 467 (2006) 23. ”Simultaneous Optical Measurement of Ge Content and Carbon Doping in Strained Epitaxial SiGe Films”, S. Morris, D. Le Cunff, D. Ristoiu, V. Vachellerie, F. Deleglise, and D. Dutartre J. Vac. Sci. Technol. B 23, 2249 (2005)
  • 6. 24. “Enhanced Carbon Confinement of Ultranarrow Boron Profiles in SiGeC HBTs”, Enicks, D., Oleszek, G., Electron Devices, IEEE Transactions on, Volume 53, Issue 8, Aug. 2006 Page(s):1834 – 1839 25. “Impact of Elevated Oxygen Concentration on In-situ Doped Sub-50 nm SiGe and SiGeC Base Strained Layer NPN HBT”, Oleszek, G.; Enicks, D., Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on, 2004 Page(s):253 - 254 26. “Study of Process Induced Localized Elevated Oxygen Concentration in Strained Boron Doped Sub-50 nm SiGeC Base Sayers for High Frequency npn HBTs”, Enicks, D., Oleszek, G., Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on 9-11 May 2005 Page(s):195 – 198 27. “Advanced Metrology Tool for Si1-xGex Characterization: Infrared Spectroscopic Ellipsometer (IRSE)”, Enicks, D., I-L Teng, Rubino, J., Sun, L., Defranoux, C., Bourtault, S., Hendrich, P., Stehle, J.-L., Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop 4-6 May 2004 Page(s):425 - 432 SCITATION IN THE VIRTUAL JOURNAL OF NANOSCALE SCIENCE AND TECHNOLOGY 28. “Thermal Redistribution of Oxygen and Carbon in Boron-Doped Pseudomorphic SiGeC Heterojunction Nanometer Base Layers”, Darwin Enicks and Gerald Oleszek, J. Electrochem. Soc. 153, G529 (2006) OTHER 29. Investigation of carbon profiles for enhanced boron confinement and improved carrier transport in strained silicon germanium nanolayers for heterojunction bipolar transistors / (2007), Enicks, Darwin Gene., Thesis (Ph. D.)--University of Colorado at Colorado Springs, 2007. 30. Oxygen effects in sub-50 NM silicon germanium processing with emphasis on HBT manufacturing and performance / (2004), Enicks, Darwin Gene., Thesis (M.S.)--University of Colorado at Colorado Springs, 2004. 31. “Nanometer SiGeC HBTS With Enhanced Device Properties Using Carbon Confinement Process Technology”, D. Enicks1 , G. Oleszek2 , ATMEL Corporation1 , University of Colorado at Colorado Springs2
  • 7. INTELLECTUAL PROPERTY PORTFOLIO Hyperlink to USPTO GRANT NO. TITLE 1 7,439,558 METHOD AND SYSTEM FOR CONTROLLED OXYGEN INCORPORATION IN COMPOUND SEMICONDUCTOR FILMS FOR DEVICE PERFORMANCE ENHANCEMENT 2 7,300,849 BANDGAP ENGINEERED MONO-CRYSTALLINE SILICON CAP LAYERS FOR SIGE HBT PERFORMANCE ENHANCEMENT 3 7,080,440 VERY LOW MOISTURE O-RING AND METHOD FOR PREPARING THE SAME 4 7,044,147 SYSTEM, APPARATUS AND METHOD FOR CONTAMINANT REDUCTION IN SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT COMPONENTS Patents pending; hyperlink to USPTO PUB. APP. NO. TITLE 1 20080237716 INTEGRATED CIRCUIT STRUCTURES HAVING A BORON ETCH-STOP LAYER AND METHODS, DEVICES AND SYSTEMS RELATED THERETO 2 20080142836 METHOD FOR GROWTH OF ALLOY LAYERS WITH COMPOSITIONAL CURVATURE IN A SEMICONDUCTOR DEVICE 3 20080128750 METHOD AND SYSTEM FOR PROVIDING A METAL OXIDE SEMICONDUCTOR DEVICE HAVING A DRIFT ENHANCED CHANNEL 4 20080128749 METHOD AND SYSTEM FOR PROVIDING A DRIFT COUPLED DEVICE 5 20080099882 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY SELECTIVE, AND THERMALLY RESILIENT CARBON ETCH-STOP 6 20080099840 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY SELECTIVE, AND THERMALLY RESILIENT BORON ETCH-STOP 7 20080099754 METHOD FOR PROVIDING A NANOSCALE, HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) ON INSULATOR 8 20080050883 HETROJUNCTION BIPOLAR TRANSISTOR (HBT) WITH PERIODIC MULTILAYER BASE 9 20070262295 A METHOD FOR MANIPULATION OF OXYGEN WITHIN SEMICONDUCTOR MATERIALS 10 20070148890 OXYGEN ENHANCED METASTABLE SILICON GERMANIUM FILM LAYER 11 20070111428 BANDGAP ENGINEERED MONO-CRYSTALLINE SILICON CAP LAYERS FOR SIGE HBT PERFORMANCE ENHANCEMENT 12 20070105330 BANDGAP AND RECOMBINATION ENGINEERED EMITTER LAYERS FOR SIGE HBT PERFORMANCE OPTIMIZATION 13 20070102834 STRAIN-COMPENSATED METASTABLE COMPOUND BASE HETEROJUNCTION BIPOLAR TRANSISTOR 14 20070102729 METHOD AND SYSTEM FOR PROVIDING A HETEROJUNCTION BIPOLAR TRANSISTOR HAVING SIGE EXTENSIONS 15 20070102728 METHOD AND SYSTEM FOR CONTROLLED OXYGEN INCORPORATION IN COMPOUND SEMICONDUCTOR FILMS FOR DEVICE PERFORMANCE ENHANCEMENT 16 20070080411 SEMICONDUCTIVE FILM WITH DOPANT DIFFUSION BARRIER AND
  • 8. TUNABLE WORK FUNCTION 17 20070054460 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY SELECTIVE, AND THERMALLY RESILIENT SILICON, GERMANIUM, OR SILICON-GERMANIUM ETCH-STOP 18 20060292809 METHOD FOR GROWTH AND OPTIMIZATION OF HETEROJUNCTION BIPOLAR TRANSISTOR FILM STACKS BY REMOTE INJECTION 19 20060169318 SYSTEM, APPARATUS AND METHOD FOR CONTAMINANT REDUCTION IN SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT COMPONENTS 20 20060143913 VERY LOW MOISTURE O-RING AND METHOD FOR PREPARING THE SAME
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    Jul 23, 2017
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