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2SC5858

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a datasheet for some mosfet. TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV ? High Voltage : VCBO = 1700 V ? Low Saturation Voltage : VCE (sat) = 1.5 V (Max) ? High Speed : tf(2) = 0.1 μs (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Base Voltage VCBO 1700 V Collector−Emitter Voltage VCEO 750 V Emitter−Base Voltage VEBO 5 V DC IC 22 Collector Current Pulse ICP 44 A Base Current IB 11 A Collector Power Dissipation PC 200 W Junction Temperature Tj 150 °C Storage Temperature Range Tstg −55~150 °C
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  2SC5858 2006-11-22 1  TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858   HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV    High Voltage : V CBO  = 1700 V    Low Saturation Voltage : V CE   (sat)  = 1.5 V (Max)    High Speed : t f(2)  = 0.1 μ s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)   CHARACTERISTIC SYMBOL RATING UNIT Collector  − Base Voltage V CBO   1700 V Collector  − Emitter Voltage V CEO   750 V Emitter  − Base Voltage V EBO   5 V DC I C   22 Collector Current Pulse   I CP   44  A Base Current I B   11 A Collector Power Dissipation P C   200 W Junction Temperature T  j   150 °C Storage Temperature Range T stg   − 55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm   JEDEC ―  JEITA ―  TOSHIBA 2-21F2A Weight: 9.75 g (typ.)  2SC5858 2006-11-22 2 ELECTRICAL CHARACTERISTICS (Tc = 25°C)   CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNITCollector Cut − off Current I CBO   V CB   = 1700 V, I E  = 0 ―   ―  1 mA Emitter Cut − off Current I EBO   V EB = 5 V, I C  = 0 ―   ―  100  μ  A Collector −  Emitter Breakdown Voltage V (BR)   CEO I C   = 10 mA, I B  = 0 750 ―   ―  V h FE   (1)   V CE  = 5 V, I C  = 2 A 30 ―  60 h FE   (2)   V CE  = 5 V, I C  = 8 A 11 ―  19 DC Current Gain h FE   (3)   V CE  = 5 V, I C  = 17 A 5 ―  7.5 ―  Collector  − Emitter Saturation Voltage V CE   (sat)   I C  = 17 A, I B  = 4.25 A ―   ―  1.5 V Base − Emitter Saturation Voltage V BE   (sat)   I C  = 17 A, I B  = 4.25 A ―  1.0 1.5 V Transition Frequency f  T   V CE  = 10 V, I C  = 0.1 A ―  2 ―  MHzCollector Output Capacitance C ob   V CB  = 10 V, I E  = 0, f = 1 MHz ―  280 ―  pF Storage Time t stg(1)   ―  4.5 ―  Fall Time   t f(1)   I CP  = 9 A , I B1   (end) = 1.4 A f  H  = 32 kHz ―   0.1 ―   μ s Storage Time t stg(2)   ―  3.5 ―  Switching Time Fall Time t f(2)   I CP  = 8 A, I B1   (end) = 1.2 A f  H  = 45 kHz ―   0.1 ―   μ s  2SC5858 2006-11-22 3   Collector-emitter voltage V CE  (V) I C  – V CE      C  o   l   l  e  c   t  o  r  c  u  r  r  e  n   t   I    C    (   A   ) Collector current I C  (A) h FE  – I C      D   C  c  u  r  r  e  n   t  g  a   i  n   h    F   E 100 1 0.01 Tc = 100°C − 25 25 0.1 10 100 10 Common emitter VCE = 5 V 1    C  o   l   l  e  c   t  o  r  c  u  r  r  e  n   t   I    C    (   A   ) Base − emitter voltage V BE (V) I C  – V BE   − 25 25 Tc = 100°C 0 16 12 4 8 20 0 0.2 0.4 0.6 1.2 1.0 Common emitter VCE = 5 V 0.8 10 0 0 16 12 4 2 4 6 8 10 8 20 Common emitter Tc = 25 ℃  0.61.52.0IB = 0.2 A4.0 2.50.81.20.41.03.03.5  2SC5858 2006-11-22 4   Collector current I C  (A) V CE   (sat)  – I C      C  o   l   l  e  c   t  o  r  -  e  m   i   t   t  e  r  s  a   t  u  r  a   t   i  o  n  v  o   l   t  a  g  e   V    C   E   (  s  a   t   )    (   V   ) 100 1 100.10.0110 1Common emitter Tc = 25 ℃  86 10IC / IB = 4 Collector current I C  (A) V CE   (sat)  – I C      C  o   l   l  e  c   t  o  r  -  e  m   i   t   t  e  r  s  a   t  u  r  a   t   i  o  n  v  o   l   t  a  g  e   V    C   E   (  s  a   t   )    (   V   ) 100.10.011100 1 10 Common emitter Tc = 100 ℃  86 10IC / IB = 4 Base current I B  (A) V CE  – I B      C  o   l   l  e  c   t  o  r  -  e  m   i   t   t  e  r  v  o   l   t  a  g  e   V    C   E    (   V   ) 0 8 6 2 4 10 16 Ic = 17 A15 Common emitter Tc = − 25 ℃  7 4.0 0 0.8 1.6 3.2 2.4 8 9 10 11 1213 14 Base current I B  (A) V CE  – I B     o   l   l  e  c   t  o  r  -  e  m   i   t   t  e  r  v  o   l   t  a  g  e   V    C   E    (   V   ) Common emitter Tc = 25 ℃  0 8 6 2 4 10 4.0 0 0.8 1.6 3.2 2.4 16 Ic = 17 A 15 7 8 9 10 11 12 1314 V CE(sat)  – I C      C  o   l   l  e  c   t  o  r  -  e  m   i   t   t  e  r  s  a   t  u  r  a   t   i  o  n  v  o   l   t  a  g  e   V    C   E   (  s  a   t   )    (   V   ) Collector current I C  (A) 0.011 10.11010 100 6 10Common emitter Tc = − 25 ℃  IC / IB = 4 8    C  o   l   l  e  c   t  o  r  -  e  m   i   t   t  e  r  v  o   l   t  a  g  e   V    C   E    (   V   ) Base current I C  (A) V CE  – I B 4.0 0 0.8 1.6 3.2 0 8 6 2 4 10 16 Ic = 17 A15 7 8 9 10 11 1214 2.4   Common emitter Tc = 100 ℃  

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