Bandgap Circuits - Best Reference

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Bandgap circuits Principles and Problems
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BandgapReference SimulationPrinciples andProblems Joerg BerknerIFAG AIM AP D MI ED CAD  Page 220 years anniversary AKB, Infineon Technologies AG, Munich, Oct.18 + 19, 2007v071021 Table of contents  Bandgapreference error sources  Bandgapreference basics  Summary  Page 320 years anniversary AKB, Infineon Technologies AG, Munich, Oct.18 + 19, 2007v071021 Bandgapreference basics IC temperature dependence  IC depends on T vs. IS(T) an VT(T)  IS includes µ(T) and ni 2 (T)  m (=XTI) represents the mobility temperature dependence  Egrepresents the band gap of the material  = )(exp)()( T V V qT  IS T  I  T  BE  BC       −⋅= kT  E T C T  IS   gm exp)( qkT T V  T   = )(      −−      ⋅= 000  1exp)()( T T V V T T T  IS T  IS  T gm      −−      ⋅= qkT V T T qkT V T T T  IS T  I   BE gmC   / exp1 / exp)()( 000  Page 420 years anniversary AKB, Infineon Technologies AG, Munich, Oct.18 + 19, 2007v071021 Bandgapreference basics VBE temperature dependence  V BE decreases with T (neg. TC)  Slope of VBE(T) depends complementary on current density JC  Note: The slope changes with temperature. This nonlinearityis the reason for the nonlinearityof VBG vs. T  Importantobservation: ∆V BE increasesvs. T (pos. TC) Vbe vs. T C=1e-5, m=-1.5, Vg=1.11 0.400.500.600.700.800.901.00-50050100150 T / C    V   b  e   /   V vbe1_1uvbe2_10uvbe3_100uvbe4_1m J C +J C -

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