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TC74HC74AP/AF/AFN 2007-10-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC74AP,TC74HC74AF,TC74HC74AFN Dual D-Type Flip Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP FLOP fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The signal level applied to the D INPUT is transferred to Q OUTPUT during the positive going transition
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  TC74HC74AP/AF/AFN 2007-10-01 1  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC74AP,TC74HC74AF,TC74HC74AFN Dual D-Type Flip Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP FLOP fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The signal level applied to the D INPUT is transferred to Q OUTPUT during the positive going transition of the CLOCK pulse. CLEAR  and PRESET  are independent of the CLOCK and are accomplished by setting the appropriate input to an “L” level.  All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features ã   High speed: f  max  = 77 MHz (typ.) at V CC  = 5 V ã   Low power dissipation: I CC  = 2 μ  A (max) at Ta = 25°C ã   High noise immunity: V NIH  = V NIL  = 28% V CC  (min) ã   Output drive capability: 10 LSTTL loads ã   Symmetrical output impedance: |I OH | = I OL  = 4 mA (min) ã   Balanced propagation delays: t pLH ∼ − t pHL   ã   Wide operating voltage range: V CC  (opr) = 2~6 V ã   Pin and function compatible with 74LS74 Pin Assignment Note: xxxFN (JEDEC SOP) is not available in Japan.   TC74HC74AP TC74HC74AF TC74HC74AFN Weight DIP14-P-300-2.54 : 0.96 g (typ.) SOP14-P-300-1.27A : 0.18 g (typ.) SOL14-P-150-1.27 : 0.12 g (typ.) www DataSheet U com  TC74HC74AP/AF/AFN 2007-10-01 2 IEC Logic Symbol Truth Table Inputs Outputs CLR  PR D CK Q Q  Function L H X X L H Clear H L X X H L Preset L L X X H H  ⎯   H H L L H  ⎯   H H H H L  ⎯   H H X Q n   n Q  No Change X: Don’t care System Diagram www DataSheet U com  TC74HC74AP/AF/AFN 2007-10-01 3 Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V CC   − 0.5~7 V DC input voltage V IN   − 0.5~V CC   +  0.5 V DC output voltage V OUT   − 0.5~V CC   +  0.5 V Input diode current I IK   ± 20 mA Output diode current I OK   ± 20 mA DC output current I OUT   ± 25 mA DC V CC /ground current I CC   ± 50 mA Power dissipation P D  500 (DIP) (Note 2)/180 (SOP) mW Storage temperature T stg   − 65~150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta =   − 40 to 65°C. From Ta =  65 to 85°C a derating factor of − 10 mW/°C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage V CC  2~6 V Input voltage V IN  0~V CC   V Output voltage V OUT  0~V CC   V Operating temperature T opr    − 40~85 °C Input rise and fall time t r  , t f   0~1000 (V CC   =  2.0 V) 0~500 (V CC   =  4.5 V) 0~400 (V CC   =  6.0 V) ns Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. www DataSheet U com  TC74HC74AP/AF/AFN 2007-10-01 4 Electrical Characteristics DC Characteristics Test Condition   Ta =  25°C Ta =   − 40~85°CCharacteristics Symbol V CC   (V)MinTyp.Max Min MaxUnitHigh-level input voltage V IH    ⎯   2.04.56.01.503.154.20  ⎯  ⎯  ⎯     ⎯  ⎯  ⎯   1.50 3.15 4.20  ⎯  ⎯  ⎯   V Low-level input voltage V IL    ⎯   2.04.56.0  ⎯  ⎯  ⎯     ⎯  ⎯  ⎯   0.50 1.35 1.80  ⎯  ⎯  ⎯   0.501.351.80V I OH   =   − 20 μ  A 2.04.56.01.9 4.4 5.9 2.0 4.5 6.0  ⎯  ⎯  ⎯   1.9 4.4 5.9  ⎯  ⎯  ⎯   High-level output voltage V OH  V IN   =  V IH  or V IL  I OH   =   − 4 mA   I OH   =   − 5.2 mA 4.56.04.185.684.315.80  ⎯  ⎯   4.13 5.63  ⎯  ⎯   V I OL   =  20 μ  A 2.04.56.0  ⎯  ⎯  ⎯   0.0 0.0 0.0 0.1 0.1 0.1  ⎯  ⎯  ⎯   0.1 0.1 0.1 Low-level output voltage V OL  V IN   =  V IH  or V IL  I OL   =  4 mA I OL   =  5.2 mA 4.56.0  ⎯  ⎯   0.170.180.26 0.26  ⎯  ⎯   0.330.33V Input leakage current I IN   V IN   =  V CC  or GND 6.0  ⎯     ⎯    ± 0.1  ⎯    ± 1.0 μ  A Quiescent supply current I CC   V IN   =  V CC  or GND 6.0  ⎯     ⎯   2.0  ⎯   20.0 μ  A www DataSheet U com

102414.pdf

Jul 23, 2017
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