It0201 Electron Devices and Circuits

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  SRM  UNIVERSITY FACULTYOFENGINEERING  AND TECHNOLOGY SCHOOLOFELECTRONICSAND  COMMUNICATION ENGINEERINGDEPARTMENTOF  ECE COURSE  PLAN CourseCode :  IT0201 CourseTitle :Electron Devices and Circuits Branch / Semester :B.Tech –Information Technology / III  Semester  COURSESCHEDULEDAY SECTIONA(Room No: TP 301)B(Room No: TP 302)HoursTimingsHoursTimingsDay 1--108 : 45 AM To 09 : 35 AMDay 2---Day 33 –410 : 35AM To 12 : 15 PM703 : 10 PM To 04 : 00 PMDay 4501 : 30 PM To 02 : 20 PM501 : 30 PM To 02 : 20 PMDay 5108 : 45 AM To 09 : 35 AM209 : 35 AM To 10 : 25 AM FACULTY  DETAILS :  Nameofthe  staff Sec Office Office  Hours Mail  ID Mr. U. RagavendranATech Park (TP 1206A)(12.30–   1.30)PM New Staff No : 09B--- TEXT  BOOKS 1. Thomas L. Floyd,  Electronic Devices , Pearson Education, 6 th Edition, 2002.(T1) 2. Albert Malvino, David J.Bates,  Electronic Principles , Tata McGraw-Hill, 7th Edition, 2007.(T2) 3. Ramakant A. Gayakwad, op-amps and Linear Integrated Circuits , Prentice Hall of India, 4 th edition.(T3)  REFERENCE BOOKS 1.David A.Bell,  Electronic Devices and Circuits , Prentice Hall of India, 4 th edition, 2003.(R1)2.Robert Boylestad, Louis Nashelsky,  Eelctron Devices and Circuit Theory , Pearson Education, 9 th edition, 2007.(R2)3.Jacob Millman, Christos C. Halkias,  Electronic Devices and Circuits , Tata McGraw-Hill edition, 1991.(R3) PREREQUISITE :GE 0106 -Basic Engineering –II OBJECTIVES: 1.Understand theworking of diodes, transistors.2.Understand the application of different electronic devices and simple circuits . ASSESSMENTDETAILS:TENTATIVETEST  DATES: S.NODATETESTTOPICSDURATION 110.08.11CYCLE TEST –IUNIT I & II (First Half Only)2 PERIODS207.09.11CYCLE TEST –IIUNIT II (2  ND Half Only) & III2 PERIODS319.10.11MODEL EXAMFULL PORTION3HRS OUTCOMES: Studentswhohavesuccessfullycompletedthis  course Course  outcome Program  outcome a.1.This course gives an overview of various semiconductor devices.  b.At the end of this course, the students will be able to analyze and design amplifier circuits, oscillators and filter circuits employing BJT, FET devices.a.Graduateswilldemonstrateknowledge  of  mathematics,sciencesand   engineering.  b.Graduateswilldemonstratetheabilityto  design andconductexperiments,analyzeandinterpret  data c.Graduateswilldemonstratetheabilitytodesign  a system,componentorprocessasper needs  and  secificationsGraduatewill CYCLE TEST -ISURPRIASE TEST -ICYCLE TEST -IIMODEL EXAMATTENDANCETOTAL MARKS 10 MARKS5 MARKS10 MARKS20 MARKS5 MARKS50 MARKS  DETAILEDSESSION  PLAN UNIT 1 DIODESPN diode : Intrinsic and Extrinsic semiconductors –formation of pn junction –biasing the diode –VI characteristics of diode –static and dynamic resistance –drift and diffusion currents –transition and diffusion capacitance -diode models –PSPICE diode model Diode applications : HWR –FWR–power supply filters and regulators –diode clipping and clamping circuits. Special purpose diodes: Zener diodes –zener diode applications –Varactor diode – LED –photo diode – Schottky diode –PIN diode –step recovery diode –Tunnel diode -Laser diode (discuss only the basic characteristics of various diodes). SessionNo Topicstobe  covered Reference Teaching method 1 Introduction semiconductors& its typesT1 BB2 Introduction & Formation of PN junction diodeT1 BB3 Characteristicsof diode–resistance–currents-capacitanceT1 BB4 Diode models –PSPICE diode modelT1 BB5 – 6 HWR –FWR –filters and regulators –clipping and clamping circuitsT1 BB7 – 8 Special purpose diodes–discussion about only the  basic characteristics of various diodesT1 BB 9ReviewClass NotesObjective UNIT 2 BJTsBipolar Junction Transistors : Physical structure –basic operation –the CE connection –Transistor characteristics and parameters –transistor as an amplifier –transistor as a switch –transistor biasing –dc load line operating point –bias stability –analysis of various dc bias circuits. BJT amplifiers: Transistor modeling –PSPICE BJT model –small signal analysis of voltage divider biased CE, CB and CC amplifiers using h-parameter model –MultistageAmplifiers –frequency response of amplifiers – PSPICE simulation examples. SessionNo Topicstobe  covered Reference Teaching method 10Construction & operation of BJTT1 BB 11 –12Configuration and Application of BJTT1 BB 13dc load linecurve & stability factorT1 BB 14 –16Transistor Modeling using h -parameterT1 BB 17PSPICESimulation & frequency responseT1 BB 18ReviewClass NotesObjective  DETAILEDSESSION  PLAN UNIT 3 FETsield-Effect Transistors : The JFET -basic operation –JFET characteristics and parameters –JFET biasing – he MOSFET –basic operation –MOSFET characteristics and parameters –MOSFET biasing –MOSFET as n analog switch. ET amplifiers : JFET / Depletion MOSFET small signal model –PSPICE MOSFET model –small signal nalysis of CS, CD and CG amplifiers –Frequency response of amplifiers –PSPICE simulation examples.. SessionNo Topicstobe  covered Reference Teaching method 19Construction & operation of JFETT1BB20 –21Configuration and Application of JFETT1  BB 22 –23Construction & operation of MOSFETT1  BB 24 –25Configuration and Application of MOSFETT1  BB 26Small signal analysis of CS, CD and CG amplifier T1  BB 27ReviewClass NotesObjective UNIT 4 FEEDBACK AMPLIFIERS AND OSCILLATORSeedback amplifiers : General feedback structure –properties of negative feedback – basic feedback opologies –stability of feedback circuits –gain and phase margins. scillators : Oscillator principles –Hartley, Colpitts, Clapp, Phase shift, Wien bridge andCrystal oscillators – heir analysis and design –PSPICE simulation examples SessionNo Topicstobe  covered Reference Teaching method 28General feedback structure& its typesR2  BB 29 –30Feedback topologies& its stability gain and  phase margins.R2  BB 31 –32Principlesand designfor Hartley, Colpitts, Clapp, Phase shiftoscillatorsR2  BB 33Principlesand designfor Wien bridge and Crystal oscillatorsR2  BB 34 –35PSPICE simulation with examplesR2  BB 36ReviewClass NotesObjective
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