Documents

ls5912

Description
trt
Categories
Published
of 2
All materials on our website are shared by users. If you have any questions about copyright issues, please report us to resolve them. We are always happy to assist you.
Related Documents
Share
Transcript
    FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) e n  ~ 4nV/ √ Hz HIGH TRANSCONDUCTANCE (100MHz) g fs   ≥  4000µS ABSOLUTE MAXIMUM RATINGS 1     @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYMBOL CHARACTERISTIC TYP MIN MAXMIN MAXMIN MAX UNIT CONDITIONS GS2GS1 VV  −  Differential Gate to Source Cutoff Voltage 10 15 40 mV V DG  = 10V, I D  = 5mA  ∆ TVV  ∆ GS2GS1 −  Differential Gate to Source Cutoff Voltage Change with Temperature 20 40 40 µV/°C V DG  = 10V, I D  = 5mA T  A  = -55 to +125°C DSS2DSS1 II Gate to Source Saturation Current Ratio 0.95 1 0.95 1 0.95 1 % V DS  = 10V, V GS  = 0V G2G1 II  −  Differential Gate Current 20 20 20 nA V DG  = 10V, I D  = 5mA T  A  = +125°C fs2fs1 gg Forward Transconductance Ratio 2  0.95 1 0.95 1 0.95 1 % V DS  = 10V, I D  = 5mA f   = 1kHz CMRR Common Mode Rejection Ratio 85 dB V DG  = 5V to 10V I D  = 5mA 12348765 PDIP-BS1D1G1NCNCG2D2S2 12348765 I -BS1D1G1NCNCG2D2S2 12348765 PDIP-AS1D1SSG1G2SSD2S2   12348765 SOIC-AS1D1SSG1G2SSD2S2   5 BOTTOM VIEW-78 12367 D1G1S1S2D2G2   132 SOT-23TOP VIEW 645 S2D2G2G1D1S1 5 BOTTOM VIEW-71 12367 D1G1S1S2D2G2   Linear ntegrated Systems LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET   STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYM. CHARACTERISTIC TYP MIN MAXMIN MAXMIN MAX UNIT CONDITIONS BV GSS  Gate to Source Breakdown Voltage -25 -25 -25 I G  = -1µA, V DS  = 0V V GS(off)  Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 V DS  = 10V, I D  = 1nA V GS(F)  Gate to Source Forward Voltage 0.7 I G  = 1mA, V DS  = 0V V GS  Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4 V V DG  = 10V, I G  = 5mA I DSS  Drain to Source Saturation Current 3  7 40 7 40 7 40 mA V DS  = 10V, V GS  = 0V I GSS  Gate Leakage Current -1 -50 -50 -50 V GS  = -15V, V DS  = 0V I G  Gate Operating Current -1 -50 -50 -50 pA V DG  = 10V, I D  = 5mA Linear ntegrated Systems  ã4042ClipperCourtãFremont,CA94538ãTel:510490-9160ãFax:510353-0261    Linear ntegrated Systems  ã4042ClipperCourtãFremont,CA94538ãTel:510490-9160ãFax:510353-0261   DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYM. CHARACTERISTIC TYP MIN MAXMIN MAXMIN MAX UNIT CONDITIONS f   = 1kHz 400010000400010000400010000 g fs  Forward Transconductance f   = 100MHz 400010000400010000400010000 f   = 1kHz 100 100 100 g os  Output Conductance f   = 100MHz 150 150 150 µS V DG  = 10V, I D  = 5mA C iss  Input Capacitance 5 5 5 C rss  Reverse Transfer Capacitance 1.2 1.2 1.2 pF V DG  = 10V, I D  = 5mA f   = 1MHz NF Noise Figure 1 1 1 dB V DG  = 10V, I D  = 5mA f   = 10kHz, R G  = 100K Ω f   = 100Hz 7 20 20 20 nV/ √ Hz V DG  = 10V, I D  = 5mA f   = 100Hz e n  Equivalent Input Noise Voltage f   = 10kHz 4 10 10 10 nV/ √ Hz V DG  = 10V, I D  = 5mA f   = 10kHz 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤  300µs Duty Cycle ≤  3% 3. Assumes smaller value in numerator. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatiootherwise under any patent or patent rights of Linear Integrated Systems. n or 12348765 SOIC-BS1D1G1NCNCG2D2S2 12348765 PDIP-BS1D1G1NCNCG2D2S2 Please contact the factory regarding the availability of optional packages. TO-78 0.3350.3700.3050.3350.0160.0190.1650.1850.040MAX.DIM. A0.0160.021DIM. BMIN. 0.5000.2000.1000.1000.0280.03445° 12 3567 0.0290.045SEATINGPLANE 135 SOT-23 DIMENSIONS INMILLIMETERS 246 0.951.901.501.752.603.000.350.502.803.000.901.300.000.150.090.200.100.60   12348765 PDIP-AS1D1SSG1G2SSD2S2   12348765 SOIC-AS1D1SSG1G2SSD2S2   TO-71 Six Lead 0.2300.209DIA.DIA.0.1950.1750.030 MAX.0.500 MIN.0.1500.1150.0190.016DIA. 6 LEADS   321 56 0.0460.03645°0.0480.0280.1000.050 7 1 SOIC   234 5678DIMENSIONS ININCHES0.22840.24400.1890.1960.00750.00980.0210.0140.018 0.0500.00400.00980.1500.157 1 PDIP DIMENSIONS ININCHES234 56780.1450.1700.0600.1000.2500.3750.0380.2950.320  
Search
Similar documents
Tags
We Need Your Support
Thank you for visiting our website and your interest in our free products and services. We are nonprofit website to share and download documents. To the running of this website, we need your help to support us.

Thanks to everyone for your continued support.

No, Thanks