# VTU 10CS32 Question Bank

Description
VTU 10CS32 Question Bank
Categories
Published

View again

All materials on our website are shared by users. If you have any questions about copyright issues, please report us to resolve them. We are always happy to assist you.
Related Documents
Share
Transcript
Electronic Circuits 10CS32   Dept. of CSE, SJBIT  1 VTU QUESTION BANK UNIT-1: TRANSISTORS, UJTs, AND THYRISTORS 1 . With neat figure, explain the construction and operational principle of an Unijunction Transistor (UJT). (10 marks) (July 2013)  2. Explain the effects of collector resistor, base current and supply voltage on the operating point of a fixed bias circuit. Which is the ideal position for an operating  point on the BJT fixed bias transistor circuit? Explain the above with neat diagrams. (10 marks) (June 2012)  3. What is the operating point for the following voltage divider bias circuit? (10 marks) (June 2012)  4. Sketch and explain with the circuit, the combination clippers which limit the output between ±5V.Assume diode voltage is 0.7V. (10 marks) (June 2014) 5.What is Clamping? With neat diagram and waveform, explain the working of negative clamper and also write the condition for stiff clamper. (7 marks) (June 2014) 6 . Explain Varactor diode with its characteristic curves. (3 marks) (June 2014) 7 . Find the values of resistors Rb, Rc,Re and the transistor gain β , for the circuit. Ib=40µA, Ic=4mA, Ve=2V, Vce=12V, Vcc=15V. Assume that the transistor used in the circuit is a silicon transistor  . (10 marks) (July 2013) 8 . Explain transistor in its fixed bias mode with relevant expression. (10 marks) (Dec 2012) 9 . With a neat sketch, explain transistor as a switch. (5 marks) (Dec 2012)    Electronic Circuits 10CS32   Dept. of CSE, SJBIT  2 10. For the circuit shown calculate IB, IC, VCE, VC, VE, VB. Assume β  = 100. (5 marks) (Dec 2012)   11. Explain the criteria for selecting a suitable operating point and factors affecting the stability. (10 marks) (Dec 2013) 12. Find the values of resistance RB, RC, RE and transistor gain β, for the circuit shown in Fig.Q1(b). Given that IB = 40 μA, IC = 4mA, VE = 2V, VCE = 12V and supply voltage VCC = 15V. Assume that the transistor used in the circuit is a silicon transistor. (6 marks) (Dec 2013) 13. Explain transistor as a switch. (4 marks) (Dec 2013)  Electronic Circuits 10CS32   Dept. of CSE, SJBIT  3 UNIT-2: FIELD EFFECT TRANSISTORS 1 . Explain the working of a N-channel E-Mosfet with neat diagram. Explain with a Diagram output characteristics of the same. (10 Marks)(June 2012)  2. Find the values of voltages V D  and V C  for the circuit shown, Fig.Q2(b). Assume b = 100, V BE  = 0.7 V, saturation drain current of JFET is  –  10 mA and pinch off voltage is- 5V. (4 Marks) ( June 2012)  3. With circuit diagram, explain base bias amplifier and give the importance of capacitor.   (6 Marks) ( June 2012)   4. Explain the small signal operation of amplifiers. (10 Marks) ( June 2011)   5. For the circuit given below fig.Q2(c), (i) Calculate the input impedance of the base with β  = 100; (ii) Draw the DC equivalent circuit; (ii) Draw the AC equivalent circuit using T and π model. (10 Marks) ( June 2014) 6. Explain the VI characteristics of n-channel JFET and define various conditions . (10 Marks)(Dec 2012) 7. Mention merits and demerits of IGBT. (10 Marks)(Dec 2012)  8. What are the differences between JFET & MOSFET. (10 Marks)(June-July 2013) 9. With the help of neat figures, explain the construction and characteristics of N-channel depletion MOSFET. (10 Marks)(June-July 2013) 10. How Biasing configuration using De-MOSFET work. Justify. Given that saturation drain current is 8mA, and the pinch off voltage is -2V. Determine the value of gate source voltage, drain current and the drain source voltage. (10 Marks)(June-July 2013) 11. What are the difference between BJTs and FETs? (10 Marks)(Dec 2013)  12. Explain the working of a CMOS inverter.  (10 Marks)(Dec 2013)  13. Explain the construction .working and principle of operation of an n-channel JFET. (10 Marks)(Dec 2013)    Electronic Circuits 10CS32   Dept. of CSE, SJBIT  4 UNIT-3: OPTOELECTRONIC DEVICES 1. Explain photodiode, photosensor, photo conductor and phototransistors with necessary diagrams. (10 Marks)(June 2012)  2. Find the value of RL for the circuit shown, Fig.Q3(b) such that the circuit gives a logic high when the light incident on it is above 200 lux and the photo conductor has a resistance of 14kW at a light level of 100 lux, a = 0.5, power supply voltage is VCC = 10V and reference voltage of zener diode is 3.5V. (10 Marks)(June 2012)  3. What is multistage amplifier? With the neat circuit diagram explain two stage CE amplifier and derive equation for voltage gain. (10 Marks)(June 2014)   4. For the swamped amplifier shown fig.Q3(b) below, calculate; (i) Input impedance of the  base; (ii) The input impedance of the stage; (iii) AC input voltage to the base; (iv) Voltage gain; (v) AC voltage across the load. (10 Marks)(June 2014)  5. Explain the construction and working of phototransistor and mention its applications (10 Marks)(Dec 2012) 6. What are optocouplers? Explain the working and characteristics of optocoupler. (5 Marks)(Dec 2012) 7. Define the following terms: (i) Responsivity (ii) Detectivity (iii) Quantum efficiency (iv)  Noise equivalent power (v) Response time. (5 Marks)(Dec 2012)  8. What is Phototransistor? Draw a schematic symbol of a phototransistor. Explain the V- I characteristics also. (10 Marks)(June-July 2013)  9. Explain different modes of operation of an LCD display. (10 Marks)(June-July 2013)  10. Discuss the classification of optoelectronic devices, in detail. (7 Marks)(Dec 2013) 11. Explain with neat diagrams, the principle of operation, characteristics, advantages, disadvantages and applications of a photodiode. (8 Marks)(Dec 2013)  12. Briefly discuss with necessary diagrams, the basic operation and construction of LED. (6 Marks)(Dec 2013)

Jul 23, 2017

#### ACPO Joint Letter 5 November 2014

Jul 23, 2017
Search
Similar documents

View more...
Tags

Related Search